CXMT Begins Small-Batch HBM3E Production, Trails Korean Rivals by Two Generations

ChangXin Memory Technologies (CXMT) has begun small-batch production of HBM3E memory. The company remains roughly two generations behind Korean rivals, which are transitioning to HBM4E production, but the manufacturing has entered a risk-production phase, with current HBM3E output volumes still very limited.

CXMT has not yet disclosed specific specifications for its HBM3E memory. According to JEDEC standards, the product should feature a 1024-bit interface, with per-pin transfer rates between 9.2 Gbps and 12.4 Gbps. Most standard configurations target 9.6 Gbps, yielding total bandwidth of approximately 1.2 TB/s. In terms of capacity, an 8-high stack would offer 24 GB, while a 12-high stack would provide 36 GB, both based on 24 Gb DRAM dies.

The cleanroom construction cycle for CXMT's fabs is about 12 months, compared with roughly two years for other manufacturers. CXMT currently operates multiple production facilities, including two 12-inch wafer fabs in Hefei and Beijing, each with a monthly capacity of about 100,000 wafers. The company's total current capacity is approximately 200,000 wafers per month.

As new plants in Shanghai and Hefei are completed and fully operational, CXMT plans to increase monthly capacity to about 600,000 wafers, triple its current level. It remains unclear how much of that capacity will be dedicated to HBM memory production.