Samsung Confirms 16Gbps HBM4E at Hot Chips 2026
At the Hot Chips 2026 conference, Samsung Electronics confirmed plans for HBM4E memory with a 16Gbps per-pin transfer rate, following its 14Gbps HBM4E shipments since late May 2026. The 16Gbps version would boost single-stack bandwidth to 4TB/s, up from 3.6TB/s at 14Gbps. Samsung also detailed capacity options and manufacturing technology.
In the preliminary agenda for the Hot Chips 2026 conference, Samsung Electronics executive Sangwook Han confirmed that the company is preparing to launch HBM4E high-bandwidth memory products with a per-pin transfer rate of 16Gbps. Since late May 2026, Samsung has been supplying HBM4E products at 14Gbps per pin, and the move to 16Gbps indicates that its product performance expansion and process advancement are proceeding as planned. For comparison, Samsung's current HBM4 products offer a per-pin rate of 11.7Gbps, making the HBM4E a significant improvement in transfer speed.
At the current 14Gbps specification, a single HBM4E stack with 2,048 pins can achieve a theoretical maximum bandwidth of 3.6TB/s. If the per-pin rate rises to 16Gbps, the maximum bandwidth per stack would increase to 4TB/s.
In terms of capacity, Samsung currently offers 12-layer stacked HBM4E products with a single-stack capacity of 48GB. To meet future customer demand, the company also plans to introduce 8-layer (32GB) and 16-layer (64GB) versions, covering capacity configurations for various AI computing platforms and packaging solutions.
On the manufacturing side, Samsung's HBM4E uses a DRAM-optimized sixth-generation 10-nanometer-class process and builds the high-bandwidth memory structure through multi-layer stacking. Additionally, the HBM4E will feature a customized base die fabricated on Samsung's 4-nanometer SF4 process, designed to accommodate customers' integration needs across different advanced packaging solutions and to improve product flexibility and compatibility.