Samsung Joins ASML-Led Alliance to Develop 12-Inch Photomask Technology, Targets High-NA EUV for DRAM by 2028
Samsung Electronics announced on September 8 that it has joined an alliance led by Dutch semiconductor equipment maker ASML to develop next-generation manufacturing technology, focusing on 12-inch photomasks to replace the long-used 6-inch format. The company plans to apply ASML's high-NA EUV lithography to DRAM mass production by 2028, aiming to improve fab efficiency and reduce costs amid rising AI chip demand.
Samsung Electronics announced on September 8 that it has joined an alliance led by ASML, the Dutch semiconductor equipment manufacturer, to jointly develop next-generation semiconductor manufacturing technology. The collaboration aims to advance 12-inch photomask technology, which is set to replace the 6-inch photomask format that has been widely used for decades. In a press release, Samsung said that building on years of successful cooperation, the two companies will work together to drive the development and deployment of advanced technologies, meeting the growing performance and efficiency requirements of advanced semiconductor manufacturing.
The technology focuses on improving wafer fab productivity and reducing chip manufacturing costs, with the research background linked to rising demand for AI chips. Samsung Electronics plans to apply ASML's high-NA extreme ultraviolet (EUV) lithography to the mass production of dynamic random-access memory (DRAM) for the first time by 2028. High-NA EUV technology enables higher resolution, which supports DRAM process scaling, leading to process simplification and greater manufacturing efficiency.
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