Samsung Unveils Next-Gen Memory Strategy: HBM5 Doubles HBM4E Performance, zNAND-O Sampling in 2028

Samsung Electronics unveiled its next-generation memory strategy on September 1, 2026, outlining plans to double the performance of its upcoming high-bandwidth memory HBM5 compared with HBM4E, while improving per-watt performance by 20% and reducing thermal resistance by 20%. For zHBM, the successor to HBM5, Samsung set targets of 8x performance, 3x per-watt performance, and a 75% to 90% reduction in thermal resistance relative to HBM4E.

To address the demand for high-capacity memory in large language models (LLMs), Samsung is also advancing the development of zNAND-O. The goal is to achieve bit density 10 times that of DRAM while boosting read bandwidth and energy efficiency to seven times that of NAND, with sample shipments planned to begin in 2028.

Samsung has grouped these next-generation memory technology directions under the "CUBE" strategy, representing capacity, utilization, bandwidth, and power/thermal efficiency. The core approach is not merely vertical stacking of memory, but using three-dimensional structures to simultaneously enhance capacity, bandwidth, and energy efficiency. Samsung plans to expand its product lineup from general-purpose DRAM and NAND to include HBM, enterprise SSDs, and the next-generation zHBM and zNAND-O. The details were shared at a semiconductor industry event held from September 2 to 4.